Some details about Samsung flagship smartphone the next generation, we have known under the code name Project Zero. According to information from the Korean online publication ETNews, this unit with a likely name Galaxy S6 may well get a super fast flash memory standard UFS 2.0, the mass production of which is now preparing Samsung Electronics. If this really happens, it could be a breakthrough in the mobile industry, and one of the chips gadget.
The fact that the flash memory standard UFS 2.0 because of its features is able to provide the speed of the data at 1.2 GB / s, which is three times higher than the figures exhibited standard eMMC NAND, now used in smartphones as internal accumulative memory (400 MB / s). Thus, there are opportunities significantly improve the performance of mobile devices in terms of working with the software, and so on. E., Moreover, UFS 2.0 differs enough energy efficiency, which is important. By the way, similar to flash memory in addition to Samsung plans to apply and Chinese Xiaomi.
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